NP82N055NHE

Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)• Low input capacitance Ciss = 3500 pF TYP.• Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 55 VGate to Source V...

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SeekIC No. : 004435089 Detail

NP82N055NHE: Features: • Channel temperature 175 degree rated• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)• Low input capacitance Ciss = 3500 pF TYP.• Built...

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Part Number:
NP82N055NHE
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Channel temperature 175 degree rated
• Super low on-state resistance RDS(on) = 8.6 m MAX. (VGS = 10 V, ID = 41 A)
• Low input capacitance Ciss = 3500 pF TYP.
• Built-in gate protection diode



Specifications

Drain to Source Voltage (VGS = 0 V)                                VDSS             55          V
Gate to Source Voltage (VDS = 0 V)                                 VGSS            ±20        V
Drain Current (DC) (TC = 25°C) Note1                            ID(DC)          ±82        A
Drain Current (pulse) Note2                                             ID(pulse)      ±300      A
Total Power Dissipation (TA = 25°C)                               PT                 1.8        W
Total Power Dissipation (TC = 25°C)                               PT                163        W
Channel Temperature Tch 175 °C
Storage Temperature                                                      Tstg      −55 to +175   °C
Single Avalanche Current Note3                                      IAS           72/49/17     A
Single Avalanche Energy Note3                                       EAS        51/240/289   mJ


Notes :
1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 s, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)




Description

These products NP82N055NHE are N-channel MOS Field Effect Transistors designed for high current switching applications.


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