NSS35200MR6T1G

Transistors Bipolar (BJT) 2A 35V Low VCEsat

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SeekIC No. : 00207544 Detail

NSS35200MR6T1G: Transistors Bipolar (BJT) 2A 35V Low VCEsat

floor Price/Ceiling Price

US $ .08~.09 / Piece | Get Latest Price
Part Number:
NSS35200MR6T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~3700
  • 3700~5000
  • 5000~10000
  • Unit Price
  • $.09
  • $.09
  • $.09
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 35 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 100 at 1 mA at 2 V Configuration : Single Quad Collector
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : TSOP
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 100 MHz (Min)
Configuration : Single Quad Collector
Package / Case : TSOP
Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 100 at 1 mA at 2 V
Collector- Emitter Voltage VCEO Max : 35 V


Parameters:

Technical/Catalog InformationNSS35200MR6T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)35V
Current - Collector (Ic) (Max)2A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1.5A, 1.5V
Vce Saturation (Max) @ Ib, Ic310mV @ 20mA, 2A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / Case6-TSOP
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NSS35200MR6T1G
NSS35200MR6T1G
NSS35200MR6T1GOSTR ND
NSS35200MR6T1GOSTRND
NSS35200MR6T1GOSTR



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