NSS40300MZ4

Pinout




Specifications

Rating	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	40	Vdc
Collector-Base Voltage	VCB	40	Vdc
Emitter-Base Voltage	VEB	6.0	Vdc
Base Current - Continuous	IB	1.0	Adc
Collector Current - Continuous Collector Current - Peak	IC	3.0 5.0	Adc
Total Power Dissipation Total PD @ TA = 25°C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25°C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR- 4 bd material	PD	2.0 0.80	W
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


Description

ON Semiconductor's e²PowerEdge family of low V_CE(sat) transistors NSS40300MZ4 are surface mount devices featuring ultra low saturation voltage (V_CE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

NSS40300MZ4's Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e²PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

•These are Pb-Free Devices