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NTB13N10G

MOSFET 100V 13A N-Channel

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SeekIC No. : 00161751 Detail

NTB13N10G: MOSFET 100V 13A N-Channel

NTB13N10G Data Sheet

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Part Number:
NTB13N10G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 165 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 165 mOhms


Parameters:

Technical/Catalog InformationNTB13N10G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs165 mOhm @ 6.5A, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max64.7W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB13N10G
NTB13N10G



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