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NTB18N06LT4G

MOSFET 60V 15A N-Channel

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SeekIC No. : 00163931 Detail

NTB18N06LT4G: MOSFET 60V 15A N-Channel

NTB18N06LT4G Data Sheet

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Part Number:
NTB18N06LT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 100 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 100 mOhms at 5 V


Parameters:

Technical/Catalog InformationNTB18N06LT4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs100 mOhm @ 7.5A, 5V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max48.4W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB18N06LT4G
NTB18N06LT4G
NTB18N06LT4GOSDKR ND
NTB18N06LT4GOSDKRND
NTB18N06LT4GOSDKR



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