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NTB23N03RT4G

MOSFET 25V 23A N-Channel

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SeekIC No. : 00163588 Detail

NTB23N03RT4G: MOSFET 25V 23A N-Channel

NTB23N03RT4G Data Sheet

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Part Number:
NTB23N03RT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 45 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 45 mOhms


Parameters:

Technical/Catalog InformationNTB23N03RT4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs45 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 225pF @ 20V
Power - Max37.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs3.76nC @ 4.5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB23N03RT4G
NTB23N03RT4G
NTB23N03RT4GOSCT ND
NTB23N03RT4GOSCTND
NTB23N03RT4GOSCT



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