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NTB30N06T4G

MOSFET 60V 30A N-Channel

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SeekIC No. : 00160868 Detail

NTB30N06T4G: MOSFET 60V 30A N-Channel

NTB30N06T4G Data Sheet

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Part Number:
NTB30N06T4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 42 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 42 mOhms


Parameters:

Technical/Catalog InformationNTB30N06T4G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C27A
Rds On (Max) @ Id, Vgs42 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max88.2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB30N06T4G
NTB30N06T4G



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