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NTB5605P

MOSFET -60V -18.5A

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NTB5605P: MOSFET -60V -18.5A

NTB5605P Data Sheet

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Part Number:
NTB5605P
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18.5 A
Resistance Drain-Source RDS (on) : 140 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 18.5 A
Resistance Drain-Source RDS (on) : 140 mOhms at 5 V


Features:

• Designed for Low RDS(on)
• Withstands High Energy in Avalanche and Commutation Modes


Application

• Power Supplies
• PWM Motor Control
• Converters
• Power Management


Specifications

 Parameter  Symbol  Value  Unit
 Drain−to−Source Voltage  VDSS  -60 V
 Gate−to−Source Voltage  VGS  ±20 V
 Continuous Drain
Current (Note 1)		  Steady
State		  TA = 25  ID  −18.5  A
 Power Dissipation
(Note 1)		   Steady
State		  TA = 25  PD  88  W
 Pulsed Drain Current  tp = 10µs  IDM  -55  A
 Operating Junction and Storage Temperature  TJ,
TSTG		  −55 to
175		  
 Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5.0 V, IPK = 15 A,
L = 3.0 mH, RG = 25 )		  EAS  338  mJ
 Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)		  TL  260  



Parameters:

Technical/Catalog InformationNTB5605P
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C18.5A
Rds On (Max) @ Id, Vgs140 mOhm @ 8.5A, 5V
Input Capacitance (Ciss) @ Vds 1190pF @ 25V
Power - Max88W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTB5605P
NTB5605P



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