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NTB5605PG

MOSFET -60V -18.5A P-Channel

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SeekIC No. : 00162773 Detail

NTB5605PG: MOSFET -60V -18.5A P-Channel

NTB5605PG Data Sheet

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Part Number:
NTB5605PG
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18.5 A
Resistance Drain-Source RDS (on) : 140 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 18.5 A
Resistance Drain-Source RDS (on) : 140 mOhms at 5 V


Parameters:

Technical/Catalog InformationNTB5605PG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C18.5A
Rds On (Max) @ Id, Vgs140 mOhm @ 8.5A, 5V
Input Capacitance (Ciss) @ Vds 1190pF @ 25V
Power - Max88W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB5605PG
NTB5605PG



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