Purchase NTB65N02R, In-stock NTB65N02R From SeekIC.
MFG:ON Semiconductor D/C:05+/06+
- Table of contents:
NTB65N02R
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Suppliers
DataSheet
General Description
NTB65N02R Maximum Ratings
| Rating | Symbol | Value | Unit |
| DraintoSource Voltage | VDSS | 24 | Vdc |
| GatetoSource Voltage Continuous | VGS | ±20 | Vdc |
| Drain Current (Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 s) |
ID IDM |
65 160 |
A A |
| Total Power Dissipation @ TA = 25°C | PD | 78 | W |
| Operating and Storage Temperature | TJ and Tstg |
55 to 150 |
°C |
| Single Pulse Drainto Source Avalanche Energy Starting TJ=25°C (VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH, RG = 25 ) |
EAS | TBD | mJ |
| Thermal Resistance JunctiontoCase JunctiontoAmbient (Note 1) JunctiontoAmbient (Note 2) |
RJC RJA RJA |
1.6 67 120 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from Case for 10 Seconds |
TL | 260 | °C |
NTB65N02R Features
• Planar HD3e Process for Fast Switching Performance
• Low RDSon to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Fast Switching
• Low RDSon to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Fast Switching
NTB65N02R
PDF/DataSheet Download
- Datasheet: NTB65N02R
- File Size: 48152 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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