NTD110N02RT4G

MOSFET 24V 110A N-Channel

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NTD110N02RT4G: MOSFET 24V 110A N-Channel

floor Price/Ceiling Price

US $ .26~.31 / Piece | Get Latest Price
Part Number:
NTD110N02RT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1620
  • 1620~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.31
  • $.28
  • $.28
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 4.6 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Resistance Drain-Source RDS (on) : 4.6 mOhms
Continuous Drain Current : 32 A
Drain-Source Breakdown Voltage : 24 V


Parameters:

Technical/Catalog InformationNTD110N02RT4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C12.5A
Rds On (Max) @ Id, Vgs4.6 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3440pF @ 20V
Power - Max1.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs28nC @ 4.5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD110N02RT4G
NTD110N02RT4G
NTD110N02RT4GOSCT ND
NTD110N02RT4GOSCTND
NTD110N02RT4GOSCT



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