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NTD20P06L

MOSFET -60V -15.5A

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SeekIC No. : 00160694 Detail

NTD20P06L: MOSFET -60V -15.5A

NTD20P06L Data Sheet

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Part Number:
NTD20P06L
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15.5 A
Resistance Drain-Source RDS (on) : 150 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 15.5 A
Resistance Drain-Source RDS (on) : 150 mOhms at 5 V


Features:

• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching
• Pb−Free Packages are Available


Application

• Bridge Circuits
• Power Supplies, Power Motor Controls
• DC−DC Conversion


Specifications

Parameter Symbol Value Unit
Drain−to−Source Voltage
VDSS
−60
V
Gate−to−Source
Voltage		 Continuous
VGS
VGSM
±20
±30
V
Non−Repetitive tp 10 ms
Continuous
Drain Current
(Note 1)		 Steady State TA = 25°C
ID
−15.5
A
Power Dissipa-
tion (Note 1)		 Steady State TA = 25°C
PD
65
W
Pulsed Drain Current tp = 10 s
IDM
±50
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to175
°C
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,
L = 2.7 mH, RG = 25 )
EAS
304
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C



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