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NTD25P03L1G

MOSFET -30V -25A P-Channel

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SeekIC No. : 00159751 Detail

NTD25P03L1G: MOSFET -30V -25A P-Channel

NTD25P03L1G Data Sheet

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Part Number:
NTD25P03L1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 80 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : IPAK Packaging : Tube    

Description

Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : IPAK
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 80 mOhms at 5 V


Parameters:

Technical/Catalog InformationNTD25P03L1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs80 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds 1260pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD25P03L1G
NTD25P03L1G
NTD25P03L1GOS ND
NTD25P03L1GOSND
NTD25P03L1GOS



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