MFG:ONS Package Cooled:DPAK(TO-252) D/C:09+
MFG: ONS
Package Cooled: DPAK(TO-252)
D/C: 09+
Description: This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designe...
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
| Rating |
Symbol |
Value |
Unit |
| Drain−to−Source Voltage |
VDSS |
-60 |
Vdc |
| Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGSM |
±20 ±25 |
Vdc |
| Drain Current − Continuous @ TC = 25 − Single Pulse (tp10 ms) |
ID IDM |
-12 -36 |
Adc Apk |
| Total Power Dissipation @ TC = 25 |
PD |
55 |
W |
| Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
|
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25) |
EAS |
216 |
mJ |
| Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
2.73 71.4 100 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2).
NTD2955
PDF/DataSheet Download
MOSFET P-CH 30V 25A DPAK
MOSFET P-CH 30V 25A DPAK
MOSFET P-CH 30V 25A DPAK
NTD25P03LG Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast recovery diode.
MOSFET P-CH 30V 25A IPAK3
MOSFET P-CH 30V 25A TO-251A
Price: 15-20 USD
BD82HM55-SLGZS, Intel, BGA, 65nm, 3.5W, 25mm x 27 mm
Price: 0.05-0.1 USD
capacitor array, SMD, Reflow Only, W2A43A181KAT2A, AVX Corporation
Price: 3.4-4.5 USD
DC-DC converter, module, 3,000 VRMS
Price: 1-2 USD
BGA, communications I/O Controller, I/O Controller Hub, Low Pin Count, 0.3 V, 2.0 W
Price: 250-300 USD
CM200YE4-12F, IGBT Power module, Mitsubishi Electric
Price: 1-100 USD
digital signal processor, 32-Bit, 100-LQFP, 100 MHz, 1.71 V ~ 1.89 V, 60MHz, TMS320F2802PZA
Price: 0.48-0.58 USD
controller, MSOP8, -0.3 to 6V, Low Output Voltage, Thermal Shutdown, Internal Boostrap Diode, Fixe...
Price: 2.5-3 USD
analog-to-digital converter, 16-TSSOP, 101db, 200KHz, CS5340-CZZ, Cirrus Logic
Price: 0.2-0.3 USD
HEX schmitt-trigger inverter, independent inverter, 0.5 V to 7 V, ±4mA, 1 μA, 10 LSTTL Loads
Price: 0.1-0.2 USD
2.5-volt or 2.7-volt, serial interface Flash memory, 20 MHz, 4 mA, 8MBIT, 28SOIC
Price: 0.05-0.08 USD
Capacitor, SMD, 47 μF, 6.3V, AVX Corporation, TAJA476K006RNJ
Price: 1-1 USD
IGBT module, 1400V, 25A, 110W, Low VCE(sat), Compact Package, P.C. Board Mount Module
