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NTD3055L104

MOSFET 60V 12A N-Channel

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SeekIC No. : 00166898 Detail

NTD3055L104: MOSFET 60V 12A N-Channel

NTD3055L104 Data Sheet

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Part Number:
NTD3055L104
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 104 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 104 mOhms at 5 V


Features:

• Pb−Free Packages are Available
• Lower RDS(on)
• Lower VDS(on)
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits


Pinout

Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 M)
VDGR
60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms)
VGS
VGS
±15
±20
Vdc
Drain Current
− Continuous @ TC = 25
− Continuous @ TC = 100
− Single Pulse (tp10 s)

ID
ID
IDM


12
10
45
Adc

Apk
Total Power Dissipation @ TC = 25
Derate above 25
Total Power Dissipation @ TC = 25 (Note 1)
Total Power Dissipation @ TC = 25 (Note 2)
PD
48
0.32
2.1
1.5

W
W/
W
W

Operating and Storage Temperature Range
TJ, Tstg
−55 to +175
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH
IL(pk) = 11 A, VDS = 60 Vdc)
EAS
61
mJ
Thermal Resistance− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)

RJC
RJA
RJA
3.13
71.4
110
/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1, pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).


Description

 NTD3055L104 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.




Parameters:

Technical/Catalog InformationNTD3055L104
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs104 mOhm @ 6A, 5V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max1.5W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD3055L104
NTD3055L104



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