NTD4809NA-35G

MOSFET NFET 30V 58A 9MOHM

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NTD4809NA-35G: MOSFET NFET 30V 58A 9MOHM

floor Price/Ceiling Price

US $ .18~.38 / Piece | Get Latest Price
Part Number:
NTD4809NA-35G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.38
  • $.29
  • $.24
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 11.5 A Resistance Drain-Source RDS (on) : 9 mOhms
Mounting Style : Through Hole Package / Case : IPAK
Packaging : Rail    

Description

Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Continuous Drain Current : 11.5 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 9 mOhms
Packaging : Rail


Parameters:

Technical/Catalog InformationNTD4809NA-35G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1456pF @ 12V
Power - Max2W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 4.5V
Package / CaseIPak, TO-251, DPak (3 straight short leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTD4809NA 35G
NTD4809NA35G



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