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NTD65N03R

MOSFET 25V 65A N-Channel

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SeekIC No. : 00166398 Detail

NTD65N03R: MOSFET 25V 65A N-Channel

NTD65N03R Data Sheet

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Part Number:
NTD65N03R
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11.4 A
Resistance Drain-Source RDS (on) : 8.4 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 11.4 A
Resistance Drain-Source RDS (on) : 8.4 mOhms


Features:

• Low RDS(on)
• Ultra Low Gate Charge
• Low Reverse Recovery Charge
• Pb−Free Packages are Available


Application

• Desktop CPU Power
• DC−DC Converters
• High and Low Side Switch


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 25 V
Gate−to−Source Voltage VGS +20 V
Continuous Drain
Current (RJC) Limited
by Die		 Steady
State		 TC = 25°C ID 65 A
TC = 85°C 45
Continuous Drain
Current (RJC) Limited
by Wire		 TC = 25°C ID 32 A
Power Dissipation
(RJC)		 TC = 25°C PD 50 W
Continuous Drain
Current (Note 1)		 Steady
State		 TA = 25°C ID 11.4 A
Power Dissipation
(Note 1)		 TC = 85°C 8.9 W
TA = 25°C PD 1.88
Continuous Drain
Current (Note 2)		 Steady
State		 TA = 25°C ID 9.5 A
TA = 85°C 7.4
Power Dissipation
(Note 2)		 TA = 25°C PD 1.3 W
Pulsed Drain Current tp = 10 s IDM 130 A
Operating Junction and Storage
Temperature		 TJ, Tstg −55 to 175 °C
Drain−to−Source (dv/dt) dv/dt 2.0 V/ns
Source Current (Body Diode) IS 2.1 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V, IL = 12 A,
L = 1.0 mH, RG = 25  )		 EAS 71.7 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)		 TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
    (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
   (Cu area = 0.15 in sq) [1 oz] including traces.


Parameters:

Technical/Catalog InformationNTD65N03R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs8.4 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 20V
Power - Max1.3W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTD65N03R
NTD65N03R



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