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NTGD1100LT1G

MOSFET 8V +/-3.3A P-Channel w/Level Shift

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SeekIC No. : 00153139 Detail

NTGD1100LT1G: MOSFET 8V +/-3.3A P-Channel w/Level Shift

NTGD1100LT1G Data Sheet

floor Price/Ceiling Price

US $ .22~.33 / Piece | Get Latest Price
Part Number:
NTGD1100LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.33
  • $.29
  • $.25
  • $.22
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 8 V at P Channel
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : +/- 3.3 A
Resistance Drain-Source RDS (on) : 140 mOhms at P Channel Configuration : Dual Common Drain Gate
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : TSOP
Drain-Source Breakdown Voltage : 8 V at P Channel
Continuous Drain Current : +/- 3.3 A
Resistance Drain-Source RDS (on) : 140 mOhms at P Channel
Configuration : Dual Common Drain Gate


Parameters:

Technical/Catalog InformationNTGD1100LT1G
VendorON Semiconductor (VA)
CategoryIntegrated Circuits (ICs)
TypeGeneral Purpose
Number of Outputs1
Voltage - Input1.8 ~ 8 V
Package / Case6-TSOP
PackagingDigi-Reel?
Current Limit3.3A
Internal Switch(s)Yes
Operating Temperature-50°C ~ 150°C
Rds (On)55 mOhm
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTGD1100LT1G
NTGD1100LT1G
NTGD1100LT1GOSDKR ND
NTGD1100LT1GOSDKRND
NTGD1100LT1GOSDKR



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