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NTGD1100LT1

MOSFET 8V +/-3.3A P-Channel

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SeekIC No. : 00165914 Detail

NTGD1100LT1: MOSFET 8V +/-3.3A P-Channel

NTGD1100LT1 Data Sheet

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Part Number:
NTGD1100LT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 8 V at P Channel
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : +/- 3.3 A
Resistance Drain-Source RDS (on) : 140 mOhms at P Channel Configuration : Dual Common Drain Gate
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Package / Case : TSOP
Drain-Source Breakdown Voltage : 8 V at P Channel
Continuous Drain Current : +/- 3.3 A
Resistance Drain-Source RDS (on) : 140 mOhms at P Channel
Configuration : Dual Common Drain Gate


Parameters:

Technical/Catalog InformationNTGD1100LT1
VendorON Semiconductor
CategoryIntegrated Circuits (ICs)
TypeGeneral Purpose
Number of Outputs1
Voltage - Input1.8 ~ 8 V
Package / Case6-TSOP
PackagingTape & Reel (TR)
Current Limit3.3A
Internal Switch(s)Yes
Operating Temperature-55°C ~ 150°C
Rds (On)55 mOhm
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTGD1100LT1
NTGD1100LT1



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