MOSFET PFET 20V 3.1A .1MOH
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 110 mOhms at 4.5 V | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSOP | Packaging : | Reel |
Technical/Catalog Information | NTGS3441PT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 1.8A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 4.5V |
Input Capacitance (Ciss) @ Vds | 345pF @ 15V |
Power - Max | 510mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 6nC @ 4.5V |
Package / Case | 6-TSOP |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NTGS3441PT1G NTGS3441PT1G |