NTGS3441T1

MOSFET 20V 1A P-Channel

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SeekIC No. : 00165086 Detail

NTGS3441T1: MOSFET 20V 1A P-Channel

floor Price/Ceiling Price

Part Number:
NTGS3441T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TSOP Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Package / Case : TSOP
Continuous Drain Current : 3.3 A
Resistance Drain-Source RDS (on) : 90 mOhms at 4.5 V


Features:

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Miniature TSOP−6 Surface Mount Package
• Pb−Free Package is Available



Application

• Power Management in Portable and Battery−Powered Products, i.e.:
   Cellular and Cordless Telephones, and PCMCIA Cards



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage − Continuous VGS ±8.0 V
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp  10 S)
RJA
Pd
ID
IDM
244
0.5
−1.65
−10
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp  10 S)
RJA
Pd
ID
IDM
128
1.0
−2.35
−14
°C/W
W
A
A
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current − Continuous @ TA = 25°C
− Pulsed Drain Current (Tp  10 S)
RJA
Pd
ID
IDM
62.5
2.0
−3.3
−20
°C/W
W
A
A
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
TL 260 °C
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2, square FR−4 board (1, sq. 2 oz. cu. 0.06, thick single sided), operating to steady state.
3. Mounted onto a 2, square FR−4 board (1, sq. 2 oz. cu. 0.06, thick single sided), t  5.0 seconds.



Parameters:

Technical/Catalog InformationNTGS3441T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.65A
Rds On (Max) @ Id, Vgs90 mOhm @ 3.3A, 4.5V
Input Capacitance (Ciss) @ Vds 480pF @ 5V
Power - Max500mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs14nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTGS3441T1
NTGS3441T1
NTGS3441T1OS ND
NTGS3441T1OSND
NTGS3441T1OS



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