NTHD3101FT3G

MOSFET -20V -4.4A P-Channel w/4.1A Schottky

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SeekIC No. : 00161962 Detail

NTHD3101FT3G: MOSFET -20V -4.4A P-Channel w/4.1A Schottky

floor Price/Ceiling Price

Part Number:
NTHD3101FT3G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 3.2 A
Configuration : Single Dual Drain
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHD3101FT3G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs80 mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) @ Vds 680pF @ 10V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.4nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureDiode (Isolated)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHD3101FT3G
NTHD3101FT3G



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