NTHD3102CT1G

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Continuous Drain Current : 4 A at N Channel, 3.1 A at P Channel
Resistance Drain-Source RDS (on) : 45 mOhms at 4.5 V at N Channel, 80 mOhms at 4.5 V at P Channel
Package / Case : Chip FET


Parameters:

Technical/Catalog Information	NTHD3102CT1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	4A, 3.1A
Rds On (Max) @ Id, Vgs	45 mOhm @ 4.4A, 4.5V
Input Capacitance (Ciss) @ Vds	510pF @ 10V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.9nC @ 4.5V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHD3102CT1G NTHD3102CT1G NTHD3102CT1GOSTR ND NTHD3102CT1GOSTRND NTHD3102CT1GOSTR