NTHD4102PT3G

MOSFET PFET 20V 4.8A 80M

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SeekIC No. : 00161897 Detail

NTHD4102PT3G: MOSFET PFET 20V 4.8A 80M

floor Price/Ceiling Price

Part Number:
NTHD4102PT3G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.9 A
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Chip FET Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Continuous Drain Current : 2.9 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 80 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTHD4102PT3G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.9A
Rds On (Max) @ Id, Vgs80 mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) @ Vds 750pF @ 16V
Power - Max1.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs8.6nC @ 4.5V
Package / CaseChipFET
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHD4102PT3G
NTHD4102PT3G



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