MOSFET 20V 3.9A N-Channel
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 2.9 A | ||
| Resistance Drain-Source RDS (on) : | 80 mOhms at 4.5 V | Configuration : | Single Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | Chip FET | Packaging : | Reel |
| Technical/Catalog Information | NTHD4N02FT1 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.9A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.9A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 300pF @ 10V |
| Power - Max | 910mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4nC @ 4.5V |
| Package / Case | 8-ChipFET? |
| FET Feature | Diode (Isolated) |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NTHD4N02FT1 NTHD4N02FT1 NTHD4N02FT1OS ND NTHD4N02FT1OSND NTHD4N02FT1OS |