NTHS4501NT1

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Hex Drain
Continuous Drain Current : 4.9 A
Package / Case : Chip FET
Resistance Drain-Source RDS (on) : 38 mOhms


Parameters:

Technical/Catalog Information	NTHS4501NT1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.9A
Rds On (Max) @ Id, Vgs	38 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds	462pF @ 24V
Power - Max	1.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	9.1nC @ 10V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTHS4501NT1 NTHS4501NT1