NTHS5402T1

MOSFET N-CH 30V 4.9A CHIPFET

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SeekIC No. : 003431585 Detail

NTHS5402T1: MOSFET N-CH 30V 4.9A CHIPFET

floor Price/Ceiling Price

Part Number:
NTHS5402T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 4.9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 20nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: -
Power - Max: 1.3W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Input Capacitance (Ciss) @ Vds: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 4.9A
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Power - Max: 1.3W
Package / Case: 8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Manufacturer: ON Semiconductor
Supplier Device Package: ChipFET?


Parameters:

Technical/Catalog InformationNTHS5402T1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.9A
Rds On (Max) @ Id, Vgs35 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTHS5402T1
NTHS5402T1
NTHS5402T1OS ND
NTHS5402T1OSND
NTHS5402T1OS



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