MOSFET 8V Dual P-Channel ESD Protection
NTJD2152PT2G: MOSFET 8V Dual P-Channel ESD Protection
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 8 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 0.775 A | ||
| Resistance Drain-Source RDS (on) : | 300 mOhms at 4.5 V | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SC-88 | Packaging : | Reel |
| Technical/Catalog Information | NTJD2152PT2G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25° C | 775mA |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 570mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 225pF @ 8V |
| Power - Max | 270mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 4nC @ 4.5V |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTJD2152PT2G NTJD2152PT2G |