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NTJD4105CT4G

MOSFET 20V/-8V 0.63A/-.775A Complementary

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SeekIC No. : 00162065 Detail

NTJD4105CT4G: MOSFET 20V/-8V 0.63A/-.775A Complementary

NTJD4105CT4G Data Sheet

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Part Number:
NTJD4105CT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V at N Channel, 8 V at P Channel
Gate-Source Breakdown Voltage : +/- 12 V, +/- 8 V Continuous Drain Current : 0.63 A at N Channel, 0.775 A at P Channel
Resistance Drain-Source RDS (on) : 375 mOhms at 4.5 V at N Channel, 300 mOhms at 4.5 V at P Channel Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V, +/- 8 V
Package / Case : SC-88
Drain-Source Breakdown Voltage : 20 V at N Channel, 8 V at P Channel
Continuous Drain Current : 0.63 A at N Channel, 0.775 A at P Channel
Resistance Drain-Source RDS (on) : 375 mOhms at 4.5 V at N Channel, 300 mOhms at 4.5 V at P Channel


Parameters:

Technical/Catalog InformationNTJD4105CT4G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)20V, 8V
Current - Continuous Drain (Id) @ 25° C630mA, 775mA
Rds On (Max) @ Id, Vgs375 mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) @ Vds 46pF @ 20V
Power - Max270mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD4105CT4G
NTJD4105CT4G



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