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NTJD4152PT1

MOSFET 20V 0.88A P-Channel

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SeekIC No. : 00164756 Detail

NTJD4152PT1: MOSFET 20V 0.88A P-Channel

NTJD4152PT1 Data Sheet

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Part Number:
NTJD4152PT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.88 A
Resistance Drain-Source RDS (on) : 260 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-88
Continuous Drain Current : 0.88 A
Resistance Drain-Source RDS (on) : 260 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTJD4152PT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C880mA
Rds On (Max) @ Id, Vgs260 mOhm @ 880mA, 4.5V
Input Capacitance (Ciss) @ Vds 155pF @ 20V
Power - Max272mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2.2nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTJD4152PT1
NTJD4152PT1



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