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NTJD4401NT4G

MOSFET 20V Dual N-Channel ESD Protection

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SeekIC No. : 00160518 Detail

NTJD4401NT4G: MOSFET 20V Dual N-Channel ESD Protection

NTJD4401NT4G Data Sheet

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Part Number:
NTJD4401NT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 0.91 A
Resistance Drain-Source RDS (on) : 375 mOhms at 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SC-88
Continuous Drain Current : 0.91 A
Resistance Drain-Source RDS (on) : 375 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTJD4401NT4G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C630mA
Rds On (Max) @ Id, Vgs375 mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) @ Vds 46pF @ 20V
Power - Max270mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTJD4401NT4G
NTJD4401NT4G



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