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NTJS3157NT1

MOSFET 20V 4A N-Channel

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SeekIC No. : 00166326 Detail

NTJS3157NT1: MOSFET 20V 4A N-Channel

NTJS3157NT1 Data Sheet

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Part Number:
NTJS3157NT1
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-88 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V
Package / Case : SC-88


Parameters:

Technical/Catalog InformationNTJS3157NT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs60 mOhm @ 4A, 4.5V
Input Capacitance (Ciss) @ Vds 500pF @ 10V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 4.5V
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTJS3157NT1
NTJS3157NT1



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