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NTJS4151PT1: MOSFET -20V -4.2A P-Channel

NTJS4151PT1 Data Sheet

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Part Number:: NTJS4151PT1
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/25

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	3.3 A
Resistance Drain-Source RDS (on) :	60 mOhms at 4.5 V	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-88	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 60 mOhms at 4.5 V
Continuous Drain Current : 3.3 A
Package / Case : SC-88

Parameters:

Technical/Catalog Information	NTJS4151PT1
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.3A
Rds On (Max) @ Id, Vgs	60 mOhm @ 3.3A, 4.5V
Input Capacitance (Ciss) @ Vds	850pF @ 10V
Power - Max	1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SC-70-6, SC-88, SOT-323-6, SOT-363
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTJS4151PT1 NTJS4151PT1 NTJS4151PT1OSCT ND NTJS4151PT1OSCTND NTJS4151PT1OSCT

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NTJS4151PT1

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