NTLJS1102PTAG

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 8 V
Configuration : Single Quad Drain
Continuous Drain Current : 8.1 A
Gate-Source Breakdown Voltage : +/- 6 V
Package / Case : WDFN
Resistance Drain-Source RDS (on) : 36 mOhms at 4.5 V


Parameters:

Technical/Catalog Information	NTLJS1102PTAG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25° C	3.7A
Rds On (Max) @ Id, Vgs	36 mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) @ Vds	1585pF @ 4V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 4.5V
Package / Case	6-WDFN
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTLJS1102PTAG NTLJS1102PTAG