NTMD3P03R2G

MOSFET 30V 3.05A P-Channel

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SeekIC No. : 00146835 Detail

NTMD3P03R2G: MOSFET 30V 3.05A P-Channel

floor Price/Ceiling Price

US $ .33~.65 / Piece | Get Latest Price
Part Number:
NTMD3P03R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.65
  • $.58
  • $.39
  • $.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.86 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 85 mOhms
Continuous Drain Current : 3.86 A


Parameters:

Technical/Catalog InformationNTMD3P03R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.34A
Rds On (Max) @ Id, Vgs85 mOhm @ 3.05A, 10V
Input Capacitance (Ciss) @ Vds 750pF @ 24V
Power - Max730mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMD3P03R2G
NTMD3P03R2G
NTMD3P03R2GOS ND
NTMD3P03R2GOSND
NTMD3P03R2GOS



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