NTMD6N02R2G

MOSFET NFET 20V 0.035R TR

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SeekIC No. : 00145898 Detail

NTMD6N02R2G: MOSFET NFET 20V 0.035R TR

floor Price/Ceiling Price

US $ .23~.47 / Piece | Get Latest Price
Part Number:
NTMD6N02R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.47
  • $.36
  • $.31
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 43 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 43 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTMD6N02R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.92A
Rds On (Max) @ Id, Vgs35 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 1100pF @ 16V
Power - Max730mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs20nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMD6N02R2G
NTMD6N02R2G
NTMD6N02R2GOS ND
NTMD6N02R2GOSND
NTMD6N02R2GOS



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