NTMD6P02R2G

MOSFET 20V 6A P-Channel

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SeekIC No. : 00149571 Detail

NTMD6P02R2G: MOSFET 20V 6A P-Channel

floor Price/Ceiling Price

US $ .29~.55 / Piece | Get Latest Price
Part Number:
NTMD6P02R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.55
  • $.5
  • $.33
  • $.29
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 7.8 A
Resistance Drain-Source RDS (on) : 33 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 7.8 A
Resistance Drain-Source RDS (on) : 33 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTMD6P02R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.8A
Rds On (Max) @ Id, Vgs33 mOhm @ 6.2A, 4.5V
Input Capacitance (Ciss) @ Vds 1700pF @ 16V
Power - Max750mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs35nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMD6P02R2G
NTMD6P02R2G
NTMD6P02R2GOS ND
NTMD6P02R2GOSND
NTMD6P02R2GOS



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