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NTMS4N01R2G

MOSFET 20V 4.2A N-Channel

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SeekIC No. : 00161942 Detail

NTMS4N01R2G: MOSFET 20V 4.2A N-Channel

NTMS4N01R2G Data Sheet

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Part Number:
NTMS4N01R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : 5.9 A
Resistance Drain-Source RDS (on) : 40 mOhms at 4.5 V Configuration : Single Quad Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 40 mOhms at 4.5 V
Continuous Drain Current : 5.9 A


Parameters:

Technical/Catalog InformationNTMS4N01R2G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.3A
Rds On (Max) @ Id, Vgs40 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds 1200pF @ 10V
Power - Max770mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs16nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTMS4N01R2G
NTMS4N01R2G
NTMS4N01R2GOS ND
NTMS4N01R2GOSND
NTMS4N01R2GOS



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