NTMS4N01R2G Selling Leads, Price trend , ON Semiconductor, NTMS4N01R2G DataSheet download, circuit diagram from SeekIC.com

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NTMS4N01R2G: MOSFET 20V 4.2A N-Channel

NTMS4N01R2G Data Sheet

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Part Number:: NTMS4N01R2G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/5

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 10 V	Continuous Drain Current :	5.9 A
Resistance Drain-Source RDS (on) :	40 mOhms at 4.5 V	Configuration :	Single Quad Drain Dual Source
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 40 mOhms at 4.5 V
Continuous Drain Current : 5.9 A

Parameters:

Technical/Catalog Information	NTMS4N01R2G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.3A
Rds On (Max) @ Id, Vgs	40 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds	1200pF @ 10V
Power - Max	770mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTMS4N01R2G NTMS4N01R2G NTMS4N01R2GOS ND NTMS4N01R2GOSND NTMS4N01R2GOS

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NTMS4N01R2G

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