NTP27N06L

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 32nC @ 5V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25° C: 27A
Input Capacitance (Ciss) @ Vds: 990pF @ 25V
Manufacturer: ON Semiconductor
Power - Max: 88.2W
Rds On (Max) @ Id, Vgs: 48 mOhm @ 13.5A, 5V


Parameters:

Technical/Catalog Information	NTP27N06L
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	48 mOhm @ 13.5A, 5V
Input Capacitance (Ciss) @ Vds	990pF @ 25V
Power - Max	88.2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 5V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTP27N06L NTP27N06L NTP27N06LOS ND NTP27N06LOSND NTP27N06LOS