NTP75N03R

MOSFET 25V 75A N-Channel

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SeekIC No. : 00165412 Detail

NTP75N03R: MOSFET 25V 75A N-Channel

floor Price/Ceiling Price

Part Number:
NTP75N03R
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 8 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 8 mOhms
Continuous Drain Current : 75 A


Features:

• Planar HD3e Process for Fast Switching Performance
• Low RDS(on) to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge



Pinout

  Connection Diagram


Specifications

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
25
Vdc
Gate−to−Source Voltage − Continuous
VGS
±20
Vdc
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25
Drain Current
− Continuous @ TC = 25
− Single Pulse (tp10 s)
RJC
PD

ID
IDM
1.68
74.4

75
225
/W
W

A
A
Thermal Resistance − Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
RJA
PD
ID
60
2.08
12.6
/W
W
A
Thermal Resistance − Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25
Drain Current − Continuous @ TA = 25
RJA
PD
ID
100
1.25
9.7
/W
W
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk,
L = 1 mH, RG = 25)
EAS
71.7
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 10 seconds
TL
260
1. When surface mounted to an FR4 board using 1 inch pad size,(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).



Parameters:

Technical/Catalog InformationNTP75N03R
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C9.7A
Rds On (Max) @ Id, Vgs8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1333pF @ 20V
Power - Max1.25W
PackagingTube
Gate Charge (Qg) @ Vgs13.2nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTP75N03R
NTP75N03R
NTP75N03ROS ND
NTP75N03ROSND
NTP75N03ROS



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