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NTTS2P03R2G

MOSFET -30V -2.48A P-Channel

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SeekIC No. : 00163013 Detail

NTTS2P03R2G: MOSFET -30V -2.48A P-Channel

NTTS2P03R2G Data Sheet

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Part Number:
NTTS2P03R2G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.75 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Micro Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Resistance Drain-Source RDS (on) : 85 mOhms
Package / Case : Micro
Continuous Drain Current : 3.75 A


Parameters:

Technical/Catalog InformationNTTS2P03R2G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.1A
Rds On (Max) @ Id, Vgs85 mOhm @ 2.48A, 10V
Input Capacitance (Ciss) @ Vds 500pF @ 24V
Power - Max600mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs22nC @ 4.5V
Package / Case8-MSOP, Micro8?, 8-uMAX, 8-uSOP,
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTTS2P03R2G
NTTS2P03R2G
NTTS2P03R2GOSCT ND
NTTS2P03R2GOSCTND
NTTS2P03R2GOSCT



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