Position: Home  > All Categories> Integrated Circuits (ICs) > NTY100N10

NTY100N10

MOSFET 100V 123A N-Channel

product image

NTY100N10 Picture
See larger image
SeekIC No. : 00165822 Detail

NTY100N10: MOSFET 100V 123A N-Channel

NTY100N10 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NTY100N10
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 123 A
Resistance Drain-Source RDS (on) : 10 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3BPL Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 10 mOhms
Continuous Drain Current : 123 A
Package / Case : TO-3BPL


Features:

• Source-to-Drain Diode Recovery Time Comparable to a Discrete
  Fast Recovery Diode
• Avalanche Energy Specified
• IDSS and RDS(on) Specified at Elevated Temperature


Application

• PWM Motor Control
• Power Supplies
• Converters


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage −(RGS = 1 M) VDGR 100 V
Gate-Source Voltage - Continuous
- Non-Repetitive (tp  10 ms)		 VGS
VGSM		 ±20
±40		 V
V
Drain Current (Note 1)
- Continuous @ TC = 25°C
- Pulsed		 lD
lDM		 123
369		 A
A
Total Power Dissipation (Note 1)
Derate above 25°C		 PD 313
5.0		 Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg -55TO150 °C
Single Pulse Drain-to-Source
Avalanche Energy - Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak
IL = 100 Apk, L = 0.1 mH, RG = 25 )		 EAS 500 mJ
Thermal Resistance - Junction to Case
- Junction to Ambient		 RJC
RJA		 0.4
25		 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds		 TL 260 °C
1. Pulse Test: Pulse Width = 10 s, Duty-Cycle = 2%.


Parameters:

Technical/Catalog InformationNTY100N10
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C123A
Rds On (Max) @ Id, Vgs10 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 10110pF @ 25V
Power - Max313W
PackagingTube
Gate Charge (Qg) @ Vgs350nC @ 10V
Package / CaseTO-264-3, TO-3BPL
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NTY100N10
NTY100N10



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Prototyping Products
AVT4168
DE1
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Isolators
HCPL062N
HCPL316J
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more