MOSFET 20V 540mA/-430mA Complementary w/ESD
NTZD3155CT5G: MOSFET 20V 540mA/-430mA Complementary w/ESD
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| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 6 V | Continuous Drain Current : | 0.54 A at N Channel, 0.43 A at P Channel | ||
| Resistance Drain-Source RDS (on) : | 550 mOhms at 4.5 V at N Channel, 900 mOhms at 4.5 V at P Channel | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-563 | Packaging : | Reel |
| Technical/Catalog Information | NTZD3155CT5G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 540mA, 430mA |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 540mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 16V |
| Power - Max | 250mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
| Package / Case | SOT-563 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTZD3155CT5G NTZD3155CT5G |