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NUS5530MNR2G

MOSFET INTEGRATED POWER BJT

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SeekIC No. : 00152488 Detail

NUS5530MNR2G: MOSFET INTEGRATED POWER BJT

NUS5530MNR2G Data Sheet

floor Price/Ceiling Price

US $ .3~.34 / Piece | Get Latest Price
Part Number:
NUS5530MNR2G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1940
  • 1940~2000
  • 2000~3000
  • 3000~5000
  • Unit Price
  • $.34
  • $.31
  • $.31
  • $.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

Quick Details

Transistor Polarity : P-Channel Gate-Source Breakdown Voltage : - 35 V
Continuous Drain Current : - 3.9 A Resistance Drain-Source RDS (on) : 200 Ohms
Mounting Style : SMD/SMT Package / Case : DFN8
Packaging : Reel    

Description

Drain-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Resistance Drain-Source RDS (on) : 200 Ohms
Continuous Drain Current : - 3.9 A
Gate-Source Breakdown Voltage : - 35 V
Package / Case : DFN8


Parameters:

Technical/Catalog InformationNUS5530MNR2G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
ApplicationsGeneral Purpose
Transistor TypePNP + P-Channel
Voltage - Rated *
Current Rating2A PNP, 3.9A P-Channel
Package / Case8-DFN
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NUS5530MNR2G
NUS5530MNR2G
NUS5530MNR2GOSCT ND
NUS5530MNR2GOSCTND
NUS5530MNR2GOSCT



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