MOSFET INTEGRATED POWER BJT
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Transistor Polarity : | P-Channel | Gate-Source Breakdown Voltage : | - 35 V |
Continuous Drain Current : | - 3.9 A | Resistance Drain-Source RDS (on) : | 200 Ohms |
Mounting Style : | SMD/SMT | Package / Case : | DFN8 |
Packaging : | Reel |
Technical/Catalog Information | NUS5530MNR2G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Applications | General Purpose |
Transistor Type | PNP + P-Channel |
Voltage - Rated | * |
Current Rating | 2A PNP, 3.9A P-Channel |
Package / Case | 8-DFN |
Packaging | Cut Tape (CT) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NUS5530MNR2G NUS5530MNR2G NUS5530MNR2GOSCT ND NUS5530MNR2GOSCTND NUS5530MNR2GOSCT |