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Part Number: NZQA6V2XV5T1

 

 

 

 

Description: This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection...


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NZQA6V2XV5T1 General Description


This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.

NZQA6V2XV5T1 Maximum Ratings

Characteristic Symbol Value Unit
Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1) PPK 100 W
Steady State Power - 1 Diode (Note 2) PD 300 mW
Thermal Resistance Junction to Ambient
Above 25°C, Derate		 RJA

 370
2.7		 °C/W
mW/°C
Maximum Junction Temperature TJmax 150 °C
Operating Junction and Storage Temperature Range TJ Tstg -55 to +150 °C
ESD Discharge MIL STD 883C - Method 3015-6
IEC1000-4-2, Air Discharge
IEC1000-4-2, Contact Discharge		 VPP


 16
16
9		 kV

Lead Solder Temperature (10 seconds duration) TL 260 °C

NZQA6V2XV5T1 Features

• SOT-553 Package Allows Four Separate Unidirectional Configurations
• Low Leakage < 1 A @ 3 Volt for NZQA5V6XV5T1
• Breakdown Voltage: 5.6 Volt - 6.8 Volt @ 1 mA
• ESD Protection Meeting IEC61000-4-2 - Level 4

NZQA6V2XV5T1 datasheet

NZQA6V2XV5T1
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