OSD1-1

The OSD1-1 is designed as silicon photodetectors which offer a broadband spectral response extending into the UV region. The series is paricularly intended for applications where sensivity in the range from 250 to 430nm is important. The detectors OSD1-1 may be operated with reverse bias up to 10V in the photovoltaic mode for best signal to noise performance.

Some absolute maximum ratings of OSD1-1 have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 12V. The second one is about its peak pulse current (1uS, 1% duty cycle) which would be 200mA. The third one is about its peak DC current which would be 10mA. The fourth one is about its storage temperature range which would be from -45°C to +100°C. The fifth one is about its operating temperature range which would be from -25°C to +75°C. The sixth one is about its soldering temperature for 5 seconds max which would be 200°C.

Also some electrical specifications of OSD1-1 (characteristics measured at 22°C ambient, and a reverse bias of 10 volts, unless otherwise stated) have been concluded into several points as follow. The first one is about its active area which would be 1mm2 and 1.13mm dia. The second one is about its responsivity which would be min 0.03A/W and typ 0.04A/W. The third one is about its dark current which would be max 0.2uA and typ 0.02uA. The fourth one is about its NEP WHz-1/2 which would be typ 4.0 x 10^-12. The fifth one is about its capacitance which would be 12pF at Vr=0V and would be 4pF at Vr=160V. The sixth one is about its package which would be 1. It should be noted that recommended operating voltage range would be from 0 to 10V, for all series 1 detectors. And so on. If you have any question or suggestion or want to know more information please contact us.