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P50N02LS

Specifications PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 55 A TC = 100 °C 38 Pulsed Drain Current1 IDM 150 Avalanche Current IAR 36 Avalanche Energy L = 0.1m...

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P50N02LS: Specifications PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID 55 A TC = 100 °C 38 ...

P50N02LS Data Sheet

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Part Number:
P50N02LS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Specifications

PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current TC = 25 °C
ID
55
A
TC = 100 °C
38
Pulsed Drain Current1
IDM
150
Avalanche Current
IAR
36
Avalanche Energy L = 0.1mH
EAS
250
mJ
Repetitive Avalanche Energy2 L = 0.05mH
EAR
8.6
Power Dissipation TC = 25 °C
PD
85
W
TC = 100 °C
46
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
°C
Lead Temperature (1/16" from case for 10 sec.)
TL
275



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