Purchase P89C51X2BA_1278637, In-stock P89C51X2BA_1278637 From SeekIC.


Part Number: P89C51X2BA_1278637
Description: The P89C51X2/P89C52X2/P89C54X2/P89C58X2 FLASH reliably stores memory contents even after 10,000 erase ...


Description: The P89C51X2/P89C52X2/P89C54X2/P89C58X2 FLASH reliably stores memory contents even after 10,000 erase ...
The P89C51X2/P89C52X2/P89C54X2/P89C58X2 FLASH reliably stores memory contents even after 10,000 erase and program cycles. The cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.
|
PARAMETER |
RATING |
UNIT |
| Operating temperature under bias |
0 to +70 or 40 to +85 |
°C |
| Storage temperature range |
65 to +150 |
°C |
| Voltage on EA/VPP pin to VSS |
0 to +13.0 |
V |
| Voltage on any other pin to VSS |
0.5 to +6.5 |
V |
| Maximum IOL per I/O pin |
15 |
mA |
| Power dissipation (based on package heat transfer limitations, not device power consumption) |
1.5 |
W |
NOTES:
1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in the AC and DC Electrical Characteristics section of this specification is not implied.
2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum.
3. Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless otherwise noted.
P89C51
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