Transistors Bipolar (BJT) LO VCESAT(BISS)TRANS
PBSS4160DS,115: Transistors Bipolar (BJT) LO VCESAT(BISS)TRANS
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 100 | Configuration : | Dual |
Maximum Operating Frequency : | 220 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SC-74-6 |
Packaging : | Reel |
Technical/Catalog Information | PBSS4160DS,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 290mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 110mV @ 1mA, 100mA |
Frequency - Transition | 220MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | 6-TSOP |
Packaging | Tape & Reel (TR) |
Drawing Number | 568; SOT457; ; 6 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PBSS4160DS,115 PBSS4160DS,115 568 4350 2 ND 56843502ND 568-4350-2 |