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PBSS4240T

Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistors.Application· Supply line switching circuits· Battery management applications· DC/DC converter applic...

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SeekIC No. : 004455640 Detail

PBSS4240T: Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistors....

PBSS4240T Data Sheet

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Part Number:
PBSS4240T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

· Low collector-emitter saturation voltage
· High current capability
· Improved device reliability due to reduced heat generation
· Replacement for SOT89/SOT223 standard packaged transistors.


Application

· Supply line switching circuits
· Battery management applications
· DC/DC converter applications
· Strobe flash units
· Heavy duty battery powered equipment (motor and lamp drivers).


Pinout

Connection Diagram Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 2 A
ICM peak collector current   - 3 A
IBM peak base current   - 300 mA
Ptot total power dissipation Tamb  25 °C; note 1 - 300 mW
Tamb  25 °C; note 2 - 480 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - 150 °C
Tamb operating ambient temperature   -65 +150 °C



Description

NPN low VCEsat transistor PBSS4240T in a SOT23 plastic package. PNP complement: PBSS5240T.


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